Transport mechanisms in SnO2:N,H thin film grown by chemical vapor deposition
Author:
Affiliation:
1. I. Physikalisches Institut; Justus-Liebig-Universität Gießen; Heinrich-Buff-Ring 16 35392 Gießen Germany
2. Institut für Festkörperphysik; Universität Bremen; Otto-Hahn-Allee 28359 Bremen Germany
Funder
LOEWE program of excellence of the Federal State of Hessen
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201700003/fullpdf
Reference30 articles.
1. Electronic structure of SnO2, GeO2, PbO2, TeO2and MgF2
2. Transparent conductors—A status review
3. Transparent conducting oxide semiconductors for transparent electrodes
4. The surface and materials science of tin oxide
5. Electronic and optical properties of fluorine-doped tin oxide films
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1. Electron dephasing processes in the thin and thick Ta-doped SnO2 films;Physica B: Condensed Matter;2022-12
2. Effects of high pressure on the electrical resistivity and dielectric properties of nanocrystalline SnO 2;Scientific Reports;2018-03-23
3. Evidence for nitrogen-related deep acceptor states in SnO2 grown by chemical vapor deposition;Journal of Applied Physics;2017-11-28
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