Atomic scale displacement field induced by a near-Σ9 twin boundary in silicon-Reference-Cited by-同舟云学术

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Atomic scale displacement field induced by a near-Σ9 twin boundary in silicon

Published:2016-03-17 Issue:8 Volume:253 Page:1545-1548
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Bonnet Roland¹,Couillard Martin²,Dhouibi Sami³,Neily Salem³

Affiliation:

1. Université Grenoble Alpes; Laboratoire des Sciences and Génie des Matériaux (SIMAP); 38000 Grenoble France

2. National Research Council Canada; 1200 Montreal Road Ottawa Ontario K1A 0R6 Canada

3. Laboratoire de Physique de la Matière Condensée and Nanosciences LR 11 ES 40, Faculté des Sciences; Université de Monastir, Rue de l'Environnement; 5019 Monastir Tunisia

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201552802/fullpdf

Reference22 articles.

1. On the energy and elastic field of dislocation arrays at the interface of a symmetrical bicrystal in anisotropic elasticity theory

2. Strain fields around dislocation arrays in a Σ9 silicon bicrystal measured by scanning transmission electron microscopy

3. Structure and bonding at the atomic scale by scanning transmission electron microscopy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Coherency dislocations in grain boundaries;Materialia;2019-12

2. Screw misfit dislocations perpendicular to one or two free surfaces;Philosophical Magazine Letters;2018-06-03

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