Raman and photoluminescence studies of transitions of quantum-confined acceptors
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201248293/fullpdf
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1. Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells
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3. Design of a top mirror for the n-GaAs homojunction far-infrared/terahertz detectors
4. Light-hole and heavy-hole transitions for high-temperature long-wavelength infrared detection
5. Impurity bound-to-unbound terahertz sensors based on beryllium and silicon δ-doped GaAs∕AlAs multiple quantum wells
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Excitonic transitions in Be-doped GaAs/AlAs multiple quantum well;Chinese Physics B;2016-04
2. Raman spectra of Be delta-doped GaAs/AlAs multiple quantum wells;J INFRARED MILLIM W;2014
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