Defect reduced selectively grown GaN pyramids as template for green InGaN quantum wells-Reference-Cited by-同舟云学术

Defect reduced selectively grown GaN pyramids as template for green InGaN quantum wells

Published:2015-12-04 Issue:1 Volume:253 Page:67-72
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Wagner J.¹,Wächter C.¹,Wild J.²,Müller M.³,Metzner S.³,Veit P.³,Schmidt G.³,Jetter M.¹,Bertram F.³,Zweck J.²,Christen J.³,Michler P.¹

Affiliation:

1. Institut für Halbleiteroptik und Funktionelle Grenzflächen, Research Center SCoPE and IQST; University of Stuttgart; Allmandring 3, 70569 Stuttgart Germany

2. Institut für Experimentelle und Angewandte Physik, University of Regensburg; Universitätsstr. 31; 93053 Regensburg Germany

3. Institut für Experimentelle Physik, Otto-von-Guericke-University Magdeburg; Universitätsplatz 2; 39106 Magdeburg Germany

Funder

PolarCoN

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201552427/fullpdf

Reference20 articles.

1. Spontaneous polarization and piezoelectric constants of III-V nitrides

2. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

3. Impact of Internal Electric Field and Localization Effect on Quantum Well Excitons in AlGaN/GaN/InGaN Light Emitting Diodes

4. Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates

5. Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges

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1. A strategy to grow three dimensional InGaN/GaN heterostructure exclusively on non-polar m-plane of two-step etched GaN nanorods;Applied Surface Science;2024-05

2. Pyramid Formation by Etching of InxGa1−xN/GaN Quantum Well Structures Grown on N‐face GaN for Nanooptical Light Emitters;physica status solidi (b);2021-08-05