Evaporation-Rate and Substrate-Temperature Dependence of Direct Exciton Transitions in BiI3 Thin Films Formed by Hot-Wall Technique on Al2 O3 Substrates-Reference-Cited by-同舟云学术

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Evaporation-Rate and Substrate-Temperature Dependence of Direct Exciton Transitions in BiI3 Thin Films Formed by Hot-Wall Technique on Al2 O3 Substrates

Published:2018-08-16 Issue:11 Volume:255 Page:1800092
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Arishima Syunshiro¹,Murata Koki²,Sakamoto Ryuta¹,Ueda Tomohiro¹,Ichikawa Fusao³,Iwamitsu Kazunori²,Akai Ichiro⁴^ORCID

Affiliation:

1. Graduate School of Science and Technology; Kumamoto University; 2-39-1 Kurokami, Chuo-ku Kumamoto 860-8555 Japan

2. Faculty of Science; Kumamoto University; 2-39-1 Kurokami, Chuo-ku Kumamoto 860-8555 Japan

3. Faculty of Advanced Science and Technology; Kumamoto University; 2-39-1 Kurokami, Chuo-ku Kumamoto 860-8555 Japan

4. Institute of Pulsed Power Science; Kumamoto University; 2-39-1 Kurokami, Chuo-ku Kumamoto 860-8555 Japan

Funder

Kakenhi Grants-in-Aid

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201800092/fullpdf

Reference37 articles.

1. Quantum Theory of the Optical and Electronic Properties of Semiconductors

2. New Transport Phenomenon in a Semiconductor "Superlattice"

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Molecular beam epitaxy of two-dimensional semiconductor BiI3 films exhibiting sharp exciton absorption;Applied Physics Letters;2021-12-13

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