Interface Studies in HgTe/HgCdTe Quantum Wells-Reference-Cited by-同舟云学术

Interface Studies in HgTe/HgCdTe Quantum Wells

Published:2020-02-11 Issue:5 Volume:257 Page:1900598
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Mikhailov Nikolay¹²,Shvets Vasiliy¹,Ikusov Danil¹,Uzhakov Ivan¹,Dvoretsky Sergey¹³^ORCID,Mynbaev Karim⁴^ORCID,Dluzewski Piotr⁵^ORCID,Morgiel Jerzy⁶^ORCID,Swiatek Zbigniew⁶,Bonchyk Olexander⁷^ORCID,Izhnin Ihor³⁸^ORCID

Affiliation:

1. Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk 630090 Russia

2. Novosibirsk State University 630090 Novosibirsk Russia

3. National Research Tomsk State University 634050 Tomsk Russia

4. ITMO University 197101 St. Petersburg Russia

5. Institute of Physics PAN 02-668 Warsaw Poland

6. Institute of Metallurgy and Material Science PAN 30-059 Krakow Poland

7. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics NASU 79060 Lviv Ukraine

8. Scientific Research Company “Electron-Carat” 79031 Lviv Ukraine

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201900598

Reference17 articles.

1. Carrier Recombination, Long‐Wavelength Photoluminescence, and Stimulated Emission in HgCdTe Quantum Well Heterostructures

2. Terahertz photoconductivity of a two-dimensional electron gas in HgCdTe/HgTe quantum wells

3. High-temperature HgTe/CdTe multiple-quantum-well lasers

4. Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

5. Strain Engineering of the Band Gap of HgTe Quantum Wells Using Superlattice Virtual Substrates

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1. Optical Studies and Transmission Electron Microscopy of HgCdTe Quantum Well Heterostructures for Very Long Wavelength Lasers;Nanomaterials;2021-07-19

2. HgCdTe-based quantum cascade lasers operating in the GaAs phonon Reststrahlen band predicted by the balance equation method;Optics Express;2020-08-12

3. Optical Studies of Molecular-Beam Epitaxy-Grown Hg1−xCdxTe with x = 0.7–0.8;Journal of Electronic Materials;2020-05-16