49-2: Design of a-Si:H Bidirectional Gate Driver Circuit Using Time Division Driving Method for In-Cell Touch Active-Matrix Liquid Crystal Displays
Author:
Affiliation:
1. Department of Electrical Engineering; National Cheng Kung University; Tainan Taiwan, R. O. C.
2. AUO Technology Center, AU Optronics Corp.; Hsinchu Science Park Hsinchu 300-78 Taiwan, R. O. C.
Funder
AU Optronics
Publisher
Wiley
Reference9 articles.
1. Distinguished student paper: Noble a-Si:H gate driver with high stability;Choi;in SID Symp. Dig. Tech. Paper.,2008
2. A low power consumption and high reliability architecture for a-Si TFT gate driver on glass;Nakamizo;in SID Symp. Dig. Tech. Papers,2010
3. Design of integrated gate driver with threshold voltage drop cancellation in amorphous silicon technology for TFT-LCD application;Chu;J. Display Technol.,2011
4. Design of bidirectional and highly stable integrated hydrogenated amorphous silicon gate driver circuits;Lin;J. Display Technol.,2011
5. Low-power a-Si:H gate driver circuit with threshold-voltage-shift recovery and synchronously controlled pull-down scheme;Lin;IEEE Trans. Electron Devices,2015
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. 28-1: A Robust Bidirectional Gate Driver on Array with Oxide TFTs;SID Symposium Digest of Technical Papers;2018-05
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