Affiliation:
1. Institute of Physical Chemistry Linz Institute for Organic Solar Cells Johannes Kepler University Linz Altenberger Straße 69 4040 Linz Austria
2. Laboratoire Matériaux Avancés et Phénomènes Quantiques Faculté des Sciences de Tunis Université de Tunis El Manar Campus Universitaire Tunis 2092 Tunisia
3. Institute of Chemical Technologies of Inorganic Materials Johannes Kepler University Linz Altenberger Straße 69 4040 Linz Austria
Abstract
Herein, the magnetic field effect on the source–drain current of organic field‐effect transistors with semiconductor layers made of H‐bonded pigments is studied. In all devices, an external magnetic field reduces the source–drain current in the transistor. The magnetic field effect is independent of the direction of the applied magnetic field. The observed increase of the magnetoresistance seems to originate from the used semiconductor or the semiconductor–dielectric interface and is not influenced by the nature of the gate electrodes or the semiconductors’ deposition procedure (e.g., grain size, layer thicknesses, etc.). As all prepared devices do have single charge carrier nature, the formation of bipolarons is suggested to be responsible for the observed magnetic field effect. The presented experiments demonstrate that hydrogen‐bonded semiconductors behave no different than their classical van der Waals‐bonded fully conjugated semiconductors’ counterparts.
Funder
Österreichische Agentur für Internationale Mobilität und Kooperation in Bildung, Wissenschaft und Forschung
Klima- und Energiefonds
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials