Interface Engineering of CZTS/TiO 2 Heterojunction Using Wide‐Bandgap Ga 2 O 3 Passivation Interlayer for Efficient Charge Extraction-Reference-Cited by-同舟云学术

Interface Engineering of CZTS/TiO ₂ Heterojunction Using Wide‐Bandgap Ga ₂ O ₃ Passivation Interlayer for Efficient Charge Extraction

Published:2022-05-22 Issue:14 Volume:219 Page:2200001
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Nisika ¹^ORCID,Ghosh Anupam¹^ORCID,Kaur Damanpreet¹^ORCID,Kaur Kulwinder¹^ORCID,Yadav Manoj K.²,Bag Ankush²^ORCID,Kumar Mukesh¹^ORCID

Affiliation:

1. Functional and Renewable Energy Materials Laboratory Department of Physics Indian Institute of Technology Ropar Punjab 140001 India

2. School of Computing and Electrical Engineering Indian Institute of Technology Mandi Himachal Pradesh 175005 India

Funder

Department of Science and Technology, Government of Kerala

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202200001

Reference55 articles.

1. Cu2ZnSnS4 solar cells with over 10% power conversion efficiency enabled by heterojunction heat treatment

2. Flexible Cu2ZnSn(S,Se)4 solar cells with over 10% efficiency and methods of enlarging the cell area

3. Strategic review of secondary phases, defects and defect-complexes in kesterite CZTS–Se solar cells

4. Spontaneous interface engineering for dopant-free poly(3-hexylthiophene) perovskite solar cells with efficiency over 24%

5. Strategic review of interface carrier recombination in earth abundant Cu–Zn–Sn–S–Se solar cells: current challenges and future prospects

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