Temperature Evolution of Charge Transport in Chitosan Based Bio‐Resistive Random‐Access Memory Device

Abstract

This study reports on the temperature stability of the Ag/chitosan/fluorine‐doped tin oxide (Ag/chitosan/FTO)‐based bio‐resistive random‐access memory (bio‐RRAM) device through current–voltage (I–V) characteristics in the temperature range of 280–360 K. From I–V characteristics, it is affirmed that in the present device, the unipolar nature of resistive switching is highly stable and reproducible. The device is quite stable at 360 K. Activation energy is higher in the low resistance state (LRS) (≈0.096 eV) compared with the high resistance state (HRS) (≈0.076 eV) due to sufficient thermal energy to cross the barrier at high temperature. From 280 to 360 K, the conduction mechanism in the HRS of the chitosan device is followed by a direct tunneling mechanism, while the Schottky mechanism is dominated in the LRS. Barrier height calculated from Schottky mechanism in an LRS is found to increase with temperature from 0.50 eV (280 K) to 0.66 eV (360 K). Evidenced current values up to 200 pA obtained with a conducting atomic force microscope infer that conduction in the chitosan‐based device is due to filaments formed by oxygen defects. It is believed that the present results are helpful for the development of future bio‐RRAM devices.