Concentrations Influence of Complexing Agents on the Physicochemical Properties of Chemical Bath Deposited n‐Type FeSxOy for Homostructure Solar Cell

Abstract

A chemical bath deposition (CBD) is applied to deposit n‐type iron sulfide (FeSxOy) film on fluorine (F)‐doped tin oxide (SnO2)–FTO substrate. The duration, temperature, and magnetic stirrer's speed in CBD are 3 h, 75 °C, and 100 revolutions per minute. The influence of complexing agents’ concentration (≤200 mm)–acid (tartaric and lactic) on the physicochemical properties of film is studied. All films are n‐type semiconductors with large bandgap (2.95–3.58 eV) and contain high oxygen (≈56–83%). Scanning electron microscopy image shows the 50 mm tartaric acid film has a uniform and denser surface morphology. FeSxOy film with tartaric acid has lesser goethite and hematite peaks in X‐ray diffraction than lactic acid. The FeSxOy film with 100 mm lactic acid exhibits a slightly higher transmittance at ≈350–450 nm. The FeSxOy homostructure reveals average open‐circuit voltage (Voc) = 0.45 V, short‐circuit current (Jsc) = 0.0003 mA cm−2, fill factor =38%, and efficiency (η) = 0.57%.