Fully GaN Monolithic Integrated Light Emitting Triode‐on‐Bipolar Junction Transistor Device Drivable with Small Current Signals and Its Frequency Response Characteristic: A Modeling and Simulation Study-Reference-Cited by-同舟云学术

Fully GaN Monolithic Integrated Light Emitting Triode‐on‐Bipolar Junction Transistor Device Drivable with Small Current Signals and Its Frequency Response Characteristic: A Modeling and Simulation Study

Published:2022-11-03 Issue:24 Volume:219 Page:2200606
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Hao Shaokun¹²^ORCID,Ye Jinyu¹²,Guo Chenguang¹²,Zhou Xiongtu¹²^ORCID,Zhang Yongai¹²,Wu Chaoxing¹²,Guo Tailiang¹²,Sun Jie¹²,Yan Qun¹²,Zhan Fan³,Liu Hengshan³

Affiliation:

1. College of Physics and Information Engineering Fuzhou University Fuzhou 350108 P. R. China

2. Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou Fujian 350108 P. R. China

3. Fujian Prima Optoelectronics Co., Ltd. Fuzhou Fujian 350000 P. R. China

Funder

National Key Research and Development Program of China

Natural Science Foundation of Fujian Province

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202200606

Reference23 articles.

1. Characteristics and techniques of GaN-based micro-LEDs for application in next-generation display

2. Development of microLED

3. Growth, transfer printing and colour conversion techniques towards full-colour micro-LED display

4. Micro Light‐Emitting Diodes for Display and Flexible Biomedical Applications

5. Mini-LED and Micro-LED: Promising Candidates for the Next Generation Display Technology

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1. Monolithic Integration of GaN-Based Transistors and Micro-LED;Nanomaterials;2024-03-12

2. Design and Photomodulation Performance of a UV-Driven Full GaN Integrated μLED and BJT Phototransistor;ACS Photonics;2024-01-26

3. A bipolar junction transistor EMC modeling method based on physical characteristic measurement and simplex optimization;International Journal of Circuit Theory and Applications;2023-09-17