Influence of Defects on the Schottky Barrier Height at BaTiO 3 /RuO 2 Interfaces-Reference-Cited by-同舟云学术

Influence of Defects on the Schottky Barrier Height at BaTiO 3 /RuO 2 Interfaces

Published:2021-06-06 Issue:14 Volume:218 Page:2100143
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Schuldt Katharina N. S.¹,Ding Hui¹,Jaud Jean-Christophe²,Koruza Jurij³,Klein Andreas¹^ORCID

Affiliation:

1. Department of Materials and Earth Sciences Electronic Structure of Materials Technical University of Darmstadt Otto-Berndt-Str. 3 64287 Darmstadt Germany

2. Department of Materials and Earth Sciences Structure Research Technical University of Darmstadt Alarich-Weiss-Str. 2 64287 Darmstadt Germany

3. Department of Materials and Earth Sciences Nonmetallic Inorganic Materials Technical University of Darmstadt Alarich-Weiss-Str. 2 64287 Darmstadt Germany

Funder

Air Force Office of Scientific Research

Hessisches Ministerium für Wissenschaft und Kunst

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100143

Reference73 articles.

1. Base-Metal Electrode-Multilayer Ceramic Capacitors: Past, Present and Future Perspectives

2. Degradation of Mn-doped BaTiO3 ceramic under a high d.c. electric field

3. dc Electrical Degradation of Perovskite-Type Titanates: III, A Model of the Mechanism

4. The Effect of the Oxygen Exchange at Electrodes on the High-Voltage Electrocoloration of Fe-Doped SrTiO3Single Crystals: A Combined SIMS and Microelectrode Impedance Study

5. Difference between resistance degradation of fixed valence acceptor (Mg) and variable valence acceptor (Mn)-doped BaTiO3 ceramics

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