Halide Vapor Phase Epitaxy of In 2 O 3 and (In 1− x Ga x ) 2 O 3 on Sapphire Substrates and GaN/Al 2 O 3 Templates

Author:

Stepanov Sergey123ORCID,Nikolaev Vladimir123,Pechnikov Alexei123,Scheglov Mikhail4,Chikiryaka Andrei2,Chernykh Alexey3,Odnobludov Maxim5,Andreeva Valentina6,Polyakov Alexander Y.3

Affiliation:

1. R&D Department Perfect Crystals LLC 26 Politekhnicheskaya St Petersburg 194021 Russian Federation

2. Laboratory of Physics of Shaped Crystals Ioffe Institute 26 Politekhnicheskaya St Petersburg 194021 Russian Federation

3. Department of Semiconductor Electronics and Semiconductor Physics National University of Science and Technology MISiS 4 Leninskiy prospekt Moscow 119049 Russian Federation

4. Division of Physics of Dielectric and Semiconductors Ioffe Institute 26 Politekhnicheskaya St Petersburg 194021 Russian Federation

5. Joint Science and Technology Institute Peter the Great St. Petersburg Polytechnic University 29 Polytechnicheskaya St.Petersburg 195251 Russian Federation

6. Institute of Machinery, Materials, and Transport Peter the Great St. Petersburg Polytechnic University 29 Polytechnicheskaya St.Petersburg 195251 Russian Federation

Funder

Russian Science Foundation

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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