Affiliation:
1. III-V Lab, A Joint Lab of Nokia Bell Labs Thales Research and Technology and CEA LETI 1 Avenue Augustin Fresnel Palaiseau 91120 France
Abstract
The introduction of selective area growth (SAG) in a mature semi‐insulating buried heterostructure (SIBH) platform for the realization of photonic integrated circuits on monolithic InP has been demonstrated. A thorough determination of the relations between quantum well thickness, transition energies, and mask geometries is performed on dedicated wafers by means of extensive micro‐X‐Ray diffraction and microphotoluminescence measurements. Based on those results, SAG is used to grow, with a single epitaxy step, AlGaInAs multiple quantum wells heterostructures, to tailor the active regions of Fabry–Pérot and distributed feedback (DFB) lasers emitting in the O‐Band. SIBH DFB lasers are realized, exhibiting threshold currents < 7.2 mA (at 25 °C), and emitting over 100‐nm spectral range in the O‐Band.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference26 articles.
1. Past, present, and future of InP-based photonic integration
2. Reflective Electroabsorption Modulators for Beyond 25 Gb/s Colorless Transmissions
3. R.Rosales I.Cano D.Nesset Y.Zhicheng R.Brenot N.Dubrovina E.Durán-Valdeiglesias H.Debrégeas D.Carrara F.Lelarge in2020 European Conf. on Optical Communications (ECOC) IEEE Brussels Belgium September2020 pp.1–4.
4. Advanced InP Photonic Integrated Circuits for Communication and Sensing