Affiliation:
1. Department of Physics University of Delhi Miranda House Delhi 110007 India
2. Department of Physics Hindu College University of Delhi Delhi 110007 India
Abstract
The present work focuses on studying the pyroelectric properties of chemical solution deposition‐grown Pb1−xLax(Zr0.4Ti0.6)O3 films on nickel substrate which are annealed at constant temperature of 650 °C with lanthanum concentrations ranging from x = 2–8% respectively. Structural studies reveal polycrystalline nature in all the PLZT films. The dielectric constant values rise from 497 to 1048 as La doping concentration rises from 2% to 6% at a constant frequency of 1 MHz, reaching a maximum value of 1048 for 6% La doping with little variation in dielectric loss between 0.03 and 0.05. As La doping level increases from 2% to 6%, the remnant (Pr) and saturation (Ps) polarization values increase from 12 to 47 μC cm−2 and 18 to 53 μC cm−2 respectively. The leakage current is found to be 2.68 × 10−8 A for 2%‐doped PZT film and it reduces to 2.94 × 10−10 A for PLZT (6% doping) film. The influence of lanthanum doping on the pyroelectric properties has been studied in detail. The value of pyroelectric coefficient (p) is varied from 240 × 10−3 to 980 × 10−3 Cm−2 K−1 and current responsivity is varied from 960 × 10−10 to 3920 × 10−10 mV−1 with the variation in lanthanum content from 2% to 6%, respectively. The promising pyroelectric results found in PLZT films encourage these films in energy applications field.