Indium Tin Oxide with High Carrier‐Collection Capacity and Radiation Resistance for GaInP Solar Cell-Reference-Cited by-同舟云学术

Indium Tin Oxide with High Carrier‐Collection Capacity and Radiation Resistance for GaInP Solar Cell

Published:2021-03-14 Issue:10 Volume:218 Page:2000804
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Dai Pan¹²^ORCID,Long Junhua²,Sun Qiangjian²,Wu Yuanyuan²,Tan Ming²,Lu Shulong²

Affiliation:

1. Zhejiang Province Key Laboratory of Smart Management & Application of Modern Agricultural Resources School of Information Engineering Huzhou University No.759, East 2nd Road Huzhou 313000 China

2. Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou Industrial Park, Ruoshui Road 398 Suzhou 215123 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202000804

Reference32 articles.

1. Superior radiation-resistant properties of InGaP/GaAs tandem solar cells

2. Experimental Results From Performance Improvement and Radiation Hardening of Inverted Metamorphic Multijunction Solar Cells

3. Radiation degradation characteristics of component subcells in inverted metamorphic triple-junction solar cells irradiated with electrons and protons

4. Current-matched triple-junction solar cell reaching 41.1% conversion efficiency under concentrated sunlight

5. 40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells

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