Behavior of Al Impurity in ZnO Films: Influence of Al‐Level Doping on Structure, X‐Ray Photoelectron Spectroscopy and Transport Properties-Reference-Cited by-同舟云学术

Behavior of Al Impurity in ZnO Films: Influence of Al‐Level Doping on Structure, X‐Ray Photoelectron Spectroscopy and Transport Properties

Published:2022-12-16 Issue:2 Volume:220 Page:2200523
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Ievtushenko Arsenii¹^ORCID,Baibara Oleksii¹^ORCID,Dranchuk Mykola¹^ORCID,Khyzhun Oleg¹^ORCID,Karpyna Vitalii¹^ORCID,Bykov Oleksandr¹^ORCID,Lytvyn Oksana²^ORCID,Tkach Vasyl³,Baturin Volodymyr⁴^ORCID,Karpenko Oleksandr⁴^ORCID

Affiliation:

1. I. Frantsevich Institute for Problems of Materials Science National Academy of Sciences of Ukraine 3 Krzhizhanovskogo Str. 03142 Kyiv Ukraine

2. Borys Grinchenko Kyiv University National Academy of Sciences of Ukraine 18/2 Bulvarno-Kudriavska Str. 04053 Kyiv Ukraine

3. V. Bakul Institute for Superhard Materials National Academy of Sciences of Ukraine 2 Avtozovodska Str. 04074 Kyiv Ukraine

4. Institute of Applied Physics National Academy of Sciences of Ukraine 58 Petropavlivska Str. 40000 Sumy Ukraine

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202200523

Reference30 articles.

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4. Raman and Photoluminescence Study of Al,N‐Codoped ZnO Films Deposited at Oxygen‐Rich Conditions by Magnetron Sputtering

5. Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD

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