Affiliation:
1. Key Lab of Wide Band Gap Semiconductor Materials and Devices Xi'an 710071 China
2. The School of Microelectronics Xidian University Xi'an 710071 China
Funder
National Natural Science Foundation of China
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference29 articles.
1. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
2. kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz
3. Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications
4. J.Ao K.Takahashi N.Shinohara N.Niwa T.Fujiwara Y.Ohno IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) IEEE Piscataway NJ2010 p.1.
5. K.Hayashino K.Harauchi Y.Iwasaki K.Fukui J.Ao Y.Ohno IEEE MTT-S Int. Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies Systems and Applications IEEE Piscataway NJ2012 p.179.
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