Study on the Interfacial Morphology and Optoelectrical Performance of Thermal‐Shocked Organic Light‐Emitting Diodes-Reference-Cited by-同舟云学术

Study on the Interfacial Morphology and Optoelectrical Performance of Thermal‐Shocked Organic Light‐Emitting Diodes

Published:2024-01-11 Issue:5 Volume:221 Page:
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Gu Jialu¹²^ORCID,Zheng Haixia¹²,Shi Wei¹²^ORCID,Fan Yuxuan¹,Zhou Pengchao¹³,Wei Bin¹²^ORCID

Affiliation:

1. School of Mechatronic Engineering and Automation Shanghai University Shanghai 200072 P. R. China

2. Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai 200072 P. R. China

3. Medical Equipment Department Affiliated Hospital of Jining Medical University Jining 273500 Shandong P. R. China

Abstract

The thermal stability of organic light‐emitting diodes (OLEDs) has attracted great attention with their application in display areas. In this article, the expansion of films under heat shock is studied. With the increase of annealing temperature, the contact between the organic and inorganic layers becomes inferior. Doping the host material uniformly in the adjacent light‐emitting layer is proposed to improve the stability of OLEDs under thermal shock. The results show that the optimized device still maintains a stable optoelectrical performance after thermal shock at 85 °C.

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202300756

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