Suppression of Impact Ionization by Carbon Doping in the GaN Buffer Layer in InAlN/GaN‐Based High Electron Mobility Transistors-Reference-Cited by-同舟云学术

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Suppression of Impact Ionization by Carbon Doping in the GaN Buffer Layer in InAlN/GaN‐Based High Electron Mobility Transistors

Published:2022-12-30 Issue: Volume: Page:2200490
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Sarkar Sujan¹^ORCID,Khade Ramdas P.¹^ORCID,DasGupta Nandita¹^ORCID,DasGupta Amitava¹^ORCID

Affiliation:

1. Department of Electrical Engineering Indian Institute of Technology Madras Chennai Tamil Nadu 600036 India

Funder

Indian Institute of Technology Madras

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202200490

Reference24 articles.

1. Band parameters for III–V compound semiconductors and their alloys

2. 1.2 kV/25 A Normally off P-N Junction/AlGaN/GaN HEMTs With Nanosecond Switching Characteristics and Robust Overvoltage Capability

3. Monte Carlo calculation of electron initiated impact ionization in bulk zinc-blende and wurtzite GaN

4. Temperature dependence of impact ionization in AlGaN–GaN heterostructure field effect transistors

5. Experimental evaluation of impact ionization coefficients in GaN

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