Photoluminescence of Point Defects in Silicon Dioxide by Femtosecond Laser Exposure-Reference-Cited by-同舟云学术

Photoluminescence of Point Defects in Silicon Dioxide by Femtosecond Laser Exposure

Published:2021-03-14 Issue:15 Volume:218 Page:2000802
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

De Michele Vincenzo¹²^ORCID,Marin Emmanuel¹,Boukenter Aziz¹,Cannas Marco²,Girard Sylvain¹,Ouerdane Youcef¹

Affiliation:

1. UJM CNRS IOGS Laboratoire H. Curien UMR 5516 Univ Lyon 42000 Saint Etienne France

2. Department of Physics and Chemistry “Emilio Segrè” University of Palermo Via Archirafi 36 90123 Palermo Italy

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202000802

Reference51 articles.

1. A simple picture for structural glasses

2. The Properties of Optical Glass

3. Defect structure of glasses

4. Point Defects in Solids

5. Defects in SiO2 and Related Dielectrics: Science and Technology

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