The Effect of Nanometer‐Scale V‐Pit Layer on the Carrier Recombination Mechanisms and Efficiency Droop of GaN‐Based Green Light‐Emitting Diodes-Reference-Cited by-同舟云学术

The Effect of Nanometer‐Scale V‐Pit Layer on the Carrier Recombination Mechanisms and Efficiency Droop of GaN‐Based Green Light‐Emitting Diodes

Published:2021-07-14 Issue:17 Volume:218 Page:2100070
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Jia Chuanyu¹^ORCID,Hu Xiduo¹,Wang Qi²,Liang Zhiwen²

Affiliation:

1. School of Electronic Engineering and Intelligentization Dongguan University of Technology Guangdong dongguan 523000 P. R. China

2. Dongguan Institute of Opto-Electronics Peking University Dongguan 523808 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100070

Reference52 articles.

1. Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates

2. Boosted ultraviolet electroluminescence of InGaN/AlGaN quantum structures grown on high-index contrast patterned sapphire with silica array

3. Highly efficient GaN-based high-power flip-chip light-emitting diodes

4. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

5. Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

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