P-9: High Performance Back Channel Etch Metal Oxide Thin-film Transistor with Double Active Layers
Author:
Affiliation:
1. 'Electronics and Telecommunications Research Institute, Korea
2. Dept. of Electrical Engineering, Korea Advanced Institute of Science and Technology, Korea
Publisher
Wiley
Reference7 articles.
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2. High Mobility and Highly Stable Aluminum-doped Indium Zinc Tin Oxide Thin-Film Transistors;Cho;SID,2014
3. Back Channel Etch Oxide TFT on Plastic Substrate for the Application of High Resolution TFT- LCD;S.-H. K.P.;AMFPD,2014
4. High Performance Oxide Thin Film Transistors with Double Active Layers;Kim;IEDM,2008
5. Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface;Kim;Applied Physics Letters,2011
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