64-3:Distinguished Student Paper: Bulk Accumulation Oxide TFTs for Flexible AMOLED Display with High Yield Integrated Gate Driver
Author:
Affiliation:
1. Advanced Display Research Center and Department of Information Display; Kyung Hee University; 02447 Seoul Korea
Publisher
Wiley
Reference23 articles.
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3. Transparent flexible circuits based on amorphous-indium-gallium-zinc-oxide thinfilm transistors;Mativenga;IEEE Electron Device Lett,2011
4. Novel oxide amorphous semiconductors: Transparent conducting amorphous oxides;Hosono;J. Non-Cryst. Solids,1996
5. The Effects of Mechanical Bending and Illumination on the Performance of Flexible IGZO TFTs;Munzenrieder;IEEE Trans. Electron Devices,2011
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1. 61‐3: Distinguished Paper: Vertically Integrated, Double‐Stack Oxide‐TFT Layers for High‐Resolution AMOLED Backplane;SID Symposium Digest of Technical Papers;2020-08
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3. In‐pixel temperature sensor for high‐luminance active matrix micro‐light‐emitting diode display using low‐temperature polycrystalline silicon and oxide thin‐film‐transistors;Journal of the Society for Information Display;2020-05-26
4. Vertically integrated, double stack oxide TFT layers for high‐resolution AMOLED backplane;Journal of the Society for Information Display;2020-05-04
5. Highly robust oxide TFT with bulk accumulation and source/drain/active layer splitting;Journal of the Society for Information Display;2019-07-03
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