P-25: Super Low Temperature Doping of Phosphorus to Poly-Si Thin Films Using XeF Excimer Laser Irradiation in Phosphoric Acid Solution
Author:
Affiliation:
1. Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka, Japan
2. GIGAPHOTON Inc., Tochigi, Japan
Publisher
Wiley
Reference7 articles.
1. Reliability Analysis of Ultra Low- temperature Polycrystalline Silicon Thin-Film Transistors;Ueno;Jpn. J. Appl. Phys.,2007
2. Surface-Free Technology by Laser Annealing (SUFTLA) and Its Application to Poly-Si TFT-LCDs on Plastic Film With Integrated Drivers;Inoue;IEEE Trans. on Electron Devices,2002
3. Low temperature poly-Si TFT-LCD by excimer laser anneal;Uchikoga;Thin Solid Films,2001
4. High-Performance Laser-Processed Polysilicon Thin-Film Transistors;Giust;IEEE Electron Device Lett,1999
5. Effects of pulse duration on crystallization of poly-Si thin films by XeF excimer laser annealing;Ohkubo;LAMP,2015
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