Design and Characterization of a 53.5% Efficient Gallium Indium Phosphide‐Based Optical Photovoltaic Converter under 637 nm Laser Irradiation at 10 W cm−2

Abstract

High‐power optical transmission (HPOT) technology has emerged as a promising alternative among far‐field wireless power transmission approaches, enabling the transfer of kilowatts of power over kilometer‐scale distances. Its exceptional adaptability allows operation in challenging scenarios where traditional electrical wiring is impractical or unfeasible, thereby opening up a vast array of potential applications previously considered utopian. An important pending assignment in enhancing the performance of laser‐based HPOT systems is achieving efficient photovoltaic conversion of high power densities (≥10 W cm−2). In this sense, there is a pressing need for the advancement of optical photovoltaic converters (OPCs) capable of enduring intense monochromatic irradiances. This work presents the design optimization, manufacturing, and characterization processes of a gallium indium phosphide (GaInP)‐based OPC under varying 637 nm laser power at room temperature. In addition, methods to evaluate the impact of temperature on performance are provided. The findings reveal a maximum efficiency of 53.5% at 10 W cm−2, surpassing literature results for GaInP converters by over 9%abs at those light intensities. Remarkably, this device withstands unmatched irradiances within GaInP OPCs up to 60 W cm−2, maintaining 42.3% efficiency. This study aims to push forward the development of wide‐bandgap power converters with recordbreaking efficiencies paving the way for new applications.