A 2D Simulation‐Assisted Investigation of a Low Breakdown Voltage Module

Abstract

Upscaling perovskites modules from laboratory to market specifications requires modules to resist heat, humidity, and partial shading. When a device is partially covered or damaged, the unbalanced photocurrent generated can create an irreversible damage. Mitigation via bypass diodes can be expensive. This might not be necessary for perovskite‐based modules. After an initial validation of the finite difference model for a simulation‐assisted investigation, a module is systematically damaged and characterized to reproduce an unbalanced photocurrent generation. The device shows a breakdown voltage (< 1 V), which is unexpectedly much lower than for a standalone perovskite cell (≈7 V). The effect is reproducible over time, and it demonstrates that in a reverse bias scenario, electricity can tunnel through the monolithic interconnection (P1P2P3) and operate similar to a low‐voltage bypass diode. Eventually, the current and voltage distribution via electroluminescence is mapped to validate the 2D simulations and reproduce the device behavior at different loads.