716 mV Open‐Circuit Voltage with Fully Screen‐Printed p ‐Type Back Junction Solar Cells Featuring an Aluminum Front Grid and a Passivating Polysilicon on Oxide Contact at the Rear Side-Reference-Cited by-同舟云学术

716 mV Open‐Circuit Voltage with Fully Screen‐Printed p ‐Type Back Junction Solar Cells Featuring an Aluminum Front Grid and a Passivating Polysilicon on Oxide Contact at the Rear Side

Published:2020-12-06 Issue:1 Volume:5 Page:2000703
ISSN:2367-198X
Container-title:Solar RRL
language:en
Short-container-title:Sol. RRL

Author:

Min Byungsul¹^ORCID,Wehmeier Nadine¹,Brendemuehl Till¹,Haase Felix¹,Larionova Yevgeniya¹,Nasebandt Lasse¹,Schulte-Huxel Henning¹,Peibst Robby¹²,Brendel Rolf¹³

Affiliation:

1. Workgroup Emerging Solar Cell Technologies Institute for Solar Energy Research Hamelin (ISFH) Am Ohrberg 1 Emmerthal 31860 Germany

2. Institute of Electronic Materials and Devices Leibniz Universität Hannover Schneiderberg 32 Hannover 30167 Germany

3. Institute for Solid State Physics Leibniz Universität Hannover Appelstraße 2 Hannover 30167 Germany

Funder

Bundesministerium für Wirtschaft und Energie

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/solr.202000703

Reference17 articles.

1. n-Type polysilicon passivating contact for industrial bifacial n-type solar cells

2. monoPoly™ cells: Large-area crystalline silicon solar cells with fire-through screen printed contact to doped polysilicon surfaces

3. Fully screen-printed bifacial large area 22.6% N-type Si solar cell with lightly doped ion-implanted boron emitter and tunnel oxide passivated rear contact

4. 24.58% total area efficiency of screen-printed, large area industrial silicon solar cells with the tunnel oxide passivated contacts (i-TOPCon) design

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