Engineering Perovskite Bandgap for Control of Hot‐Electron Dynamics in Plasmonic Nanodiodes

Author:

Park Yujin12,Choi Jungkweon123,Kim Daehan4,Kim Jungmin123,Roh Yujin1,Lee Hyunhwa1,Cho Dae Won12,Shin Byungha4ORCID,Ihee Hyotcherl123ORCID,Park Jeong Young1ORCID

Affiliation:

1. Department of Chemistry Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea

2. Center for Advanced Reaction Dynamics Institute for Basic Science (IBS) Daejeon 34141 Republic of Korea

3. KI for the BioCentury Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea

4. Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea

Abstract

Despite extensive research on utilizing plasmonic hot carriers to advance photovoltaics and photocatalysts, achieving high hot‐carrier flux remains challenging due to their rapid relaxation. Recent studies have shown that combining plasmonic metals with perovskites improves hot‐electron flow, due to the slow hot‐electron relaxation in perovskites. Additionally, perovskites offer the advantage of facile bandgap tuning through composition changes. Herein, the influence of tuning the perovskite bandgap on the lifetime and flow of hot electrons in a perovskite/plasmonic Au/TiO2 nanodiode is explored. The findings reveal that perovskites with wider bandgaps exhibit improved hot‐electron lifetime and flow, attributed to the modified hot‐electron energy favoring a slower energy loss rate, as verified by ultrafast transient absorption spectroscopic analysis. It is believed that the results successfully demonstrate the integration of engineered hot‐carrier physics into device functions, providing valuable guidance for the design of optimized hot‐carrier‐based devices in the future.

Funder

National Research Foundation of Korea

Publisher

Wiley

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