In Search of Disorder Transitions and Defects Within Cu2ZnSn(S,Se)4‐Based Absorber Layers via Temperature‐Dependent Raman Spectroscopy Technique

Author:

Gour Kuldeep Singh12ORCID,Karade Vijay C.12ORCID,Parmar Rahul3,Jang Jun Sung1,Kazim Shafaq3,Jang Suyoung1,Gunnella Roberto3,Park Jongsung4,Yun Jae Ho2,Kim Jin Hyeok1ORCID

Affiliation:

1. Optoelectronics Convergence Research Center and Department of Materials Science and Engineering Chonnam National University Gwangju 61186 Republic of Korea

2. Department of Energy Engineering Korea Institute of Energy Technology (KENTECH) Naju Jeonnam 58217 Republic of Korea

3. Physics Division School of Science and Technology University of Camerino 62032 Camerino (MC) Italy

4. Department of Energy Engineering Gyeongsang National University (GNU) Jinju Gyeongnam 52849 Republic of Korea

Abstract

The temperature‐dependent (25–300 °C) disorder transitions analyzed via Raman spectroscopic technique for the different non‐stoichiometric Cu2ZnSn(S,Se)4 (CZTSSe) thin films are demonstrated. In the thin films prepared with different Zn conditions, i.e., in Zn‐1 (Zn‐poor), the density of the A‐type defect cluster [ZnCu + VCu] increases with temperature; however, it slightly decreases and remains constant for Zn‐rich samples, i.e., Zn‐2 and Zn‐3. At the same time, the density of the B‐type defect cluster [2ZnCu + ZnSn] increases with increasing temperature and Zn content. The observations further reveal that Zn concentration has less impact on VCu formation; therefore, above the optimum Cu‐poor and Zn‐rich conditions, ZnCu shallow donors negatively influence the kesterite device performances. Finally, solar cells based on all the CZTSSe thin‐film samples (Zn‐1, Zn‐2, and Zn‐3) are fabricated in which a device based on Zn‐2 exhibits excellent power conversion efficiency of ≈11.0% with open‐circuit voltage of 478 mV, short‐circuit current of 35.51 mA cm−2, and fill factor of 64%, respectively.

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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