Affiliation:
1. Guangxi Key Laboratory of Optical and Electronic Material and Devices School of Materials Science and Engineering Guilin University of Technology 12 Jiangan Road Guilin Guangxi 541004 China
2. School of Materials Science and Engineering Key Laboratory of New Processing Technology for Nonferrous Metals and Materials of Ministry of Education Collaborative Innovation Center for Exploration of Nonferrous Metal Deposits and Efficient Utilization of Resources Guilin Guangxi 541004 China
3. State Key Lab of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China
Abstract
In conventional p–i–n inverted perovskite solar cells (PSCs), there exists considerable energy loss due to both unsatisfactory light path design and trap‐induced interfacial defects. The sunlight is absorbed competitively by conductive oxide substrates and hole transport material in front of the perovskite layer, while the opaque metal back electrode also prevents light penetration. Worse yet, there is severe nonradiative charge recombination caused by defects between the perovskite layer and the electron transport material. To tackle the above two issues, a new green‐emitting material ((CH3)4 N)2(C2H5)4N·MnBr4 is synthesized and introduced in/on the perovskite layer to achieve both defect passivation and light complementation. The green luminescence of this single crystal at the interface is found to provide secondary light absorption, as evidenced by a remarkable promotion of short‐circuit current density. It is also found that the excess PbI2 on the surface of perovskite can be effectively removed, and as the interfacial additive, ((CH3)4 N)2(C2H5)4 N·MnBr4 inhibits trap‐assisted recombination losses, which provides favorable energy‐level alignment and extends charge carrier lifetime. As a result, the champion PCE (21.23%) of the target‐treated ((CH3)4 N)2(C2H5)4 N·MnBr4 device exceeds that 19.5% of the pristine‐without ((CH3)4 N)2(C2H5)4 N·MnBr4 device. This work provides an effective interfacial strategy for high‐performance and stable inverted PSCs.
Funder
Guilin Scientific Research and Technology Development Plan