A 22.3% Efficient p‐Type Back Junction Solar Cell with an Al‐Printed Front‐Side Grid and a Passivating n + ‐Type Polysilicon on Oxide Contact at the Rear Side-Reference-Cited by-同舟云学术

A 22.3% Efficient p‐Type Back Junction Solar Cell with an Al‐Printed Front‐Side Grid and a Passivating n + ‐Type Polysilicon on Oxide Contact at the Rear Side

Published:2020-09-29 Issue:12 Volume:4 Page:2000435
ISSN:2367-198X
Container-title:Solar RRL
language:en
Short-container-title:Sol. RRL

Author:

Min Byungsul¹^ORCID,Wehmeier Nadine¹,Brendemuehl Till¹,Merkle Agnes¹,Haase Felix¹,Larionova Yevgeniya¹,David Lasse¹,Schulte-Huxel Henning¹,Peibst Robby¹²,Brendel Rolf¹³

Affiliation:

1. Institute for Solar Energy Research Hamelin (ISFH) Am Ohrberg 1 31860 Emmerthal Germany

2. Institute of Electronic Materials and Devices Leibniz Universität Hannover Schneiderberg 32 30167 Hannover Germany

3. Institute for Solid State Physics Leibniz Universität Hannover Appelstraße 2 30167 Hannover Germany

Funder

Bundesministerium für Wirtschaft und Energie

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/solr.202000435

Reference34 articles.

1. R.Brendel B.Lim presented atPV Module Technology & Applications Forum 2018 TÜV Rheinland Cologne Germany January2018.

2. R.Brendel C.Kruse A.Merkle H.Schulte-Huxel F.Haase R.Peibst in35th European Photovoltaic Solar Energy Conf. and Exhibition Brussels Belgium 2018.

3. Tunnel oxide passivating electron contacts as full-area rear emitter of high-efficiency p-type silicon solar cells

4. Working principle of carrier selective poly-Si/c-Si junctions: Is tunnelling the whole story?

5. Temperature-dependent contact resistance of carrier selective Poly-Si on oxide junctions

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