Affiliation:
1. Hebei Key Laboratory of Optic Electronic Information and Materials College of Physics Science and Technology Hebei University Baoding 071002 China
2. Institute of Information Engineering Quzhou College of Technology Quzhou 324000 China
3. Analysis Center Jiufengshan Laboratory Wuhan 430206 China
Abstract
Carrier‐selective contact is an essential strategy to improve the power conversion efficiency (PCE) of crystalline silicon (c‐Si) solar cells by enhancing carrier transport and reducing recombination. Many two‐dimensional transition metal carbides/nitrides (MXene) possess excellent electrical conductivity and tunable work function, enabling them as potential carrier‐selective contact materials for c‐Si solar cells. Herein, low work function (3.71 eV) monolayer Ti3C2Txthin films are fabricated with an ordered arrangement of nanosheets by interfacial self‐assembly method, and the Ti3C2Tx/n‐type c‐Si heterostructure achieves extremely low contact resistivity (22.64 mΩ cm2). Dopant‐free heterojunction crystalline silicon solar cell with self‐assembled monolayer Ti3C2Txelectron‐selective contact is reported for the first time, showing the highest PCE of 16.46% among MXene monolayer‐based c‐Si solar cells, which is mainly attributed to the greatly increased fill factor and open circuit voltage by the accession of self‐assembled monolayer Ti3C2Txas electron transport layer. This work opens up the possibility of applying MXene as electron transport material for photovoltaic devices.
Subject
Electrical and Electronic Engineering,Energy Engineering and Power Technology,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials