Understanding Contact Nonuniformities at Interfaces in Perovskite Silicon Tandem Solar Cells Using Luminescence Imaging, Lock‐In Thermography, and 2D/3D Simulations

Abstract

The top cell of a perovskite silicon tandem solar cell requires several material layers on each side of the perovskite absorber to efficiently extract electrons and holes, respectively. These layers must meet multiple requirements simultaneously, namely, low interface recombination, good charge carrier selectivity, low contact resistivity, and high optical transparency. Due to the complex architecture, characterization techniques are required in material and process optimization to identify loss mechanisms. Spatial resolution of the characterization is gaining importance along with the upscaling of the perovskite technology. Herein, electro‐ and photoluminescence (EL and PL) imaging is combined with illuminated lock‐in thermography (ILIT) for a comprehensive electro‐optical characterization of both subcells in perovskite silicon tandem devices with state‐of‐the‐art cell architecture. Thereby, the combination of the presented characterization methods together with numerical simulation models enables to carry out holistic investigations of device limitations. The strength of this approach is showcased by one particularly remarkable feature that is observed in the investigated tandem device, showing a low PL but high EL signal at local spots. Together with multidimensional optoelectrical device simulations, the measurements are explained and the root cause of this feature to originate from the perovskite/C60 interface is suggested.