Magnetron Sputtering Zn2SnO4 Electron‐Transport Layer for All Room‐Temperature‐Processed Perovskite Solar Cells

Author:

Liu Qiuju12,Liu Yang1ORCID,Liu Hu3,Tian Qingyong2,Fan Bin2,Bai Hua4

Affiliation:

1. School of Materials Science and Engineering (MSE) NingboTech University No. 1 South Qianhu Road Ningbo 315211 P. R. China

2. Kunshan GCL Optoelectronic Material Co., Ltd. Kunshan Jiangsu 215300 P. R. China

3. State Key Laboratory of Structural Analysis, Optimization and CAE Software for Industrial Equipment National Engineering Research Center for Advanced Polymer Processing Technology Zhengzhou University Zhengzhou Henan 450002 P. R. China

4. College of Materials Xiamen University Xiamen 361005 P. R. China

Abstract

Room‐temperature‐processed (RTP) electron‐transport layer (ETL) is a prerequisite for fabricating fully RTP perovskite solar cells (PSCs). Herein, an RTP‐Zn2SnO4 (ZSO) ETL is deposited for achieving RTP‐PSCs by magnetron sputtering using ZnO and SnO2 targets. The ZSO ETL exhibits great electrical properties, better band alignment, and yields increased grain size of the perovskite grown on it, thus facilitating electron extraction from the perovskite layer to the ETL. As a result, a champion power conversion efficiency of 21.06% is achieved in the ZSO‐based device, which is the highest value for RTP‐PSCs. The ZSO‐based PSCs also exhibit high device stability. Moreover, the efficiency of a large‐area perovskite module based on ZSO ETL reaches 17.79%.

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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