Diffusion-Induced Doping Processes and Defect Kinetics in Power Devices

Author:

Schulze H.-J.,Niedernostheide F.-J.,Bauer K.,Weidner P.

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. P.D. Taylor, Thyristor Design and Realization, Wiley & Sons, Chichester 1987.

2. H. Kabza, H.-J Schulze, Y. Gerstenmaier, P. Voss, J. Wilhelmi, W. Schmid, F. Pfirsch, K. Platzöder, presented at the 6th International Symposium on Power Semiconductor Devices & ICs, Davos, 1994, 9-12.

3. Realization of a high-voltage planar junction termination for power devices

4. Novel large area joining technique for improved power device performance

5. H.-J. Schulze, G. Deboy, presented at the SPIE Conf., Austin, 1995, 2638, 234.

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