Laser Shock Introduced Strain and Plasmonic Nanogap Engineered Large‐Scale High‐Performance Monolayer 2D Material Optoelectronic Devices

Abstract

AbstractThe poor light absorption and limited bandgap of monolayer 2D materials limit the overall performance of optoelectronic devices. In order to overcome these limitations, a method of laser shock induced chemical vapor deposition (CVD)grown 2D material straining and nanogap‐plasmonic enhancing is proposed. The tensile strain and plasmonic nanogaps are further adjusted by the collaborative deformation of nanoparticles and 2D materials induced by laser shock; thus, optimizing the performance of CVD‐grown 2D optoelectronic devices. After laser shock, the response speed of the device decreases by two orders of magnitude due to the field effect mobility increasing from 2.4 to 75.8 cm2 V−1 s−1. Due to the narrower plasmonic nanogap and the adjustment of band structure, the signal‐to‐noise ratio of monolayer molybdenumMoS2 optoelectronic devices is increased by 570%, the responsivity is increased by 67 times, and the spectral response range is extended to 720 nm. This large‐scale and ultra‐fast opto‐mechanical nanomanufacturing method provides a universal strategy for large‐scale adjustment of nanogap and 2D material strain, and also, a new avenue and approach for building high performance 2D optoelectronic devices.