Affiliation:
1. National and Local Joint Engineering Laboratory of RF Integration and Micro‐Assembly Technology College of Electronic and Optical Engineering and College of Flexible Electronics (Future Technology) Nanjing University of Posts and Telecommunications Nanjing 210023 China
2. Key Laboratory of RF Circuit and System, Ministry of Education, and Zhejiang Key Laboratory of Large‐Scale Integrated Circuit Design Hangzhou Dianzi University Hangzhou 310018 China
Abstract
AbstractThe advancement of communication systems demands ever‐smaller sizes, leading to the integration of more circuits in compact forms. A promising solution lies in Spoof Surface Plasmon Polaritons (SSPPs), which enable strong confinement, low interference, and a significant wave vector, thereby facilitating smaller sizes. However, the amplification of large plasmonic signals in a compact size remains a daunting scientific challenge for the further development of SSPPs communication systems. In this study, this challenge is tackled by selecting GaN High Electron Mobility Transistors (HEMTs) and load/source‐pull technologies. To ensure efficient operation, impedance‐matching networks are designed, resulting in a remarkably small amplifier structure. The approach involves utilizing the Bayesian optimization (BO) algorithm to fine‐tune the matching network, leading to exceptional amplification performance. The results obtained in the frequency range of 1–3 GHz are highly promising, with both simulated and measured results demonstrating an impressive output power exceeding 40 dBm, a power added efficiency (PAE) surpassing 60%, and a gain exceeding 10 dB. These remarkable achievements underscore the viability of amplifying large‐signal SSPPs and outputting high‐power SSPPs waves within a subwavelength size, opening exciting possibilities for SSPPs communication, sensing, and imaging systems.
Funder
National Natural Science Foundation of China
Cited by
1 articles.
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