High‐Performance Flexible PbS Nanofilm Wavelength Sensor with Detection Region Ranging from DUV to NIR

Author:

Liang Feng‐Xia12,Hu Yi3,Zhu Zhi‐Guo1,Wu Zhi‐Cheng1,Yu Jie3,Liang Li‐Yan1,Wang Jiang1,Wang Li1,Wu Chun‐Yan1,Song Pingan2,Luo Lin‐Bao1ORCID

Affiliation:

1. School of Microelectronics Hefei University of Technology Hefei Anhui 230009 China

2. Centre for Future Materials University of Southern Queensland Springfield 4300 Australia

3. School of Materials Science and Engineering Hefei University of Technology Hefei Anhui 230009 China

Abstract

AbstractIn this study, on the fabrication of a flexible wavelength sensor is reported, which is achieved by growing a layer of lead sulfide (PbS) nanofilm on both sides of a polyethylene terephthalate substrate using the chemical bath deposition method, followed by the deposition of two parallel Au interdigital electrodes. Experimental result shows that the photocurrent ratio of the two photodetectors monotonically decreases with increasing wavelength in the range from 265 nm (UV) to 2000 nm (NIR), indicating that the incident light wavelength can be distinguished by the photocurrent ratio. Notably, the as‐constructed wavelength sensor exhibits superior performance compared to most previously reported filter‐less designs, achieving an average absolute error of 11.5 nm and an average relative error of 1.1%. It is also found that the sensor exhibits excellent mechanical flexibility and environmental stability. Furthermore, by introducing the back‐end circuit, real‐time detection of the wavelength of monochromatic light and the peak wavelength of LED light are achieved, with detection errors not exceeding 2.8% and 2.6%, respectively. It is believed that the flexible PbS nanofilm wavelength sensor prepared in this study has potential application in future portable and flexible optoelectronic devices.

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

Wiley

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