Near‐Direct Band Alignment of MoTe <sub>2</sub> /ReSe <sub>2</sub> Type‐II p‐n Heterojunction for Efficient VNIR Photodetection-Reference-Cited by-同舟云学术

Near‐Direct Band Alignment of MoTe ₂ /ReSe ₂ Type‐II p‐n Heterojunction for Efficient VNIR Photodetection

Published:2022-05-31 Issue:10 Volume:7 Page:2200026
ISSN:2365-709X
Container-title:Advanced Materials Technologies
language:en
Short-container-title:Adv Materials Technologies

Author:

Jaffery Syed Hassan Abbas¹^ORCID,Dastgeer Ghulam²,Hussain Muhammad¹,Ali Asif¹,Hussain Sajjad¹,Ali Muhammad³,Jung Jongwan¹

Affiliation:

1. HMC (Hybrid Materials Center) and Department of Nanotechnology & Advanced Materials Engineering Sejong University Seoul 05006 Korea

2. Department of Physics & Astronomy and Graphene Research Institute‐Texas Photonics Center International Research Center (GRI–TPC IRC) Sejong University Seoul 05006 Korea

3. Interdisciplinary Research Center for Hydrogen and Energy Storage (IRC‐HES) King Fahd University of Petroleum and Minerals Dhahran 31261 Saudi Arabia

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Industrial and Manufacturing Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admt.202200026

Reference63 articles.

1. Ultrafast graphene photodetector

2. Graphene as Transparent Electrode Material for Organic Electronics

3. Single-layer MoS2 transistors