Affiliation:
1. Department of Information Engineering University of Pisa Via Caruso 16 Pisa Italy
2. Quantavis s.r.l Largo Renzo Spadoni Pisa Italy
3. NEST CNR Istituto Nanoscienze and Scuola Normale Superiore piazza San Silvestro 12 Pisa I‐56127 Italy
4. CNMC, LLC Dallas TX 75080 USA
Abstract
AbstractThere is an increasing interest in printed electronics driven principally by flexible and wearable applications. The interest stems from the ability to fabricate electronic devices, such as Field Effect Transistors (FET), more efficiently in terms of materials use and cost‐effectively than traditional lithographic techniques. Challenges persist in achieving high resolution and accuracy in defining device geometry. In the study, a high‐resolution materials printer able to achieve resolutions in the micron range, surpassing the capabilities of commercially available printers is successfully designed and fabricated. The printer incorporates an all‐in‐one printing system, comprising Inkjet and a Dip Pen Nanolithography (DPN) technique, enabling both additive and subtractive manufacturing at the microscale. The experiments demonstrate the successful fabrication of FETs based on 2D materials (2DMs), with micrometric channel lengths exhibiting a high degree of controllability and repeatability, even when contacting limited channel regions as micrometer‐sized molybdenum disulfide (MoS2) flakes. Electrical characterizations of the fabricated devices underscore the significant technological advancements achieved by the prototypes.