Scanning electron microscopy studies of double-layer silicon structures prepar by epitaxy and direct bonding-Reference-Cited by-同舟云学术

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Scanning electron microscopy studies of double-layer silicon structures prepar by epitaxy and direct bonding

Published:2006-12-07 Issue:1 Volume:19 Page:55-59
ISSN:0161-0457
Container-title:Scanning
language:en
Short-container-title:Scanning

Author:

Govorkov A. V.,Enisherlova K. L.,Milvidskii M. G.,Chervyakova E. N.

Publisher

Wiley

Subject

Instrumentation,Atomic and Molecular Physics, and Optics

Reference5 articles.

1. Processes of removing Al from silicon surfaces;Balnenko;Microelectronika,1991

2. Semiconductor wafer bonding: A review of interfacial and applications;Bengtsson;J Electron Mat,1992

3. Interconnection between properties of liquid and solid surfaces;Gubenko;J Rasplavy,1991

4. Tunneling structures fabricated by silicon wafer direct bonding;Stengl;Jpn J Appl Phys,1989

5. Forward CVC in diodes obtained by wafer direct bonding;Volle;J Pisma in JTPh,1990

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