SEM voltage contrast mechanism of passivated devices-Reference-Cited by-同舟云学术

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SEM voltage contrast mechanism of passivated devices

Published:1988 Issue:1 Volume:10 Page:3-8
ISSN:0161-0457
Container-title:Scanning
language:en
Short-container-title:Scanning

Author:

Sugiyama N.,Ikeda S.,Uchikawa Y.

Funder

Ministry of Education, Science and Culture of Japan

Publisher

Wiley

Subject

Instrumentation,Atomic and Molecular Physics, and Optics

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/sca.4950100103/fullpdf

Reference11 articles.

1. Gürlich S Herrmann KD Reimers W Kubalek E Capacitive coupling voltage contrast Scanning Electron Microscopy 1986/II SEM Inc. AMF O'Hare, IL 447 464

2. Scanning Electron Microscopy

3. Low voltage SEM inspection of micro electronic devices;Sugiyama;J Electron Microsc,1986a

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1. Charging control using pulsed scanning electron microscopy;Scanning;2006-12-07

2. Charging dynamics of integrated circuit passivation layer probe holes in the electron beam tester;Applied Physics Letters;1994-12-26

3. Sample preparation for electron beam testing: An electrical characterization method to obtain an optimized anti-charge-up carbon layer;Microelectronic Engineering;1994-03

4. Electron beam testing: A comparative study of irradiation effects on 54HCUO4 with passivation, without passivation, and with an ultra-thin carbon layer;Microelectronic Engineering;1994-03

5. Sample preparation of passivated VLSI circuits in view of the static voltage measurements through voltage contrast;Microelectronic Engineering;1992-03

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