Reliable Ge 2 Sb 2 Te 5 ‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy-Reference-Cited by-同舟云学术

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Reliable Ge 2 Sb 2 Te 5 ‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy

Published:2018-07-17 Issue:11 Volume:4 Page:1800360
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Raeis‐Hosseini Niloufar¹,Lim Seokjae²,Hwang Hyunsang²,Rho Junsuk¹³⁴^ORCID

Affiliation:

1. Department of Chemical EngineeringPohang University of Science and Technology (POSTECH) Pohang 37673 Republic of Korea

2. Department of Materials Science and EngineeringPohang University of Science and Technology (POSTECH) Pohang 37673 Republic of Korea

3. Department of Mechanical EngineeringPohang University of Science and Technology (POSTECH) Pohang 37673 Republic of Korea

4. National Institute of Nanomaterials Technology Pohang 37673 Republic of Korea

Funder

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Kortney Rose Foundation

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201800360

Reference45 articles.

1. Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories

2. Nanobatteries in redox-based resistive switches require extension of memristor theory

3. Memristive devices for computing

4. Nanoionics-based resistive switching memories

5. Nanoscale resistive switching devices: mechanisms and modeling

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