Interstitial Point Defect Scattering Contributing to High Thermoelectric Performance in SnTe-Reference-Cited by-同舟云学术

Interstitial Point Defect Scattering Contributing to High Thermoelectric Performance in SnTe

Published:2016-05-11 Issue:6 Volume:2 Page:1600019
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Pei Yanzhong¹,Zheng Linglang¹,Li Wen¹,Lin Siqi¹,Chen Zhiwei¹,Wang Yanying¹,Xu Xiangfan²,Yu Hulei³,Chen Yue³,Ge Binghui⁴

Affiliation:

1. Key Laboratory of Advanced Civil Engineering, Materials of Ministry of Education; School of Materials Science and Engineering; Tongji University; 4800 Caoan Rd. Shanghai 201804 China

2. School of Physics and Engineering; Tongji University; 1239 Siping Rd. Shanghai 200092 China

3. Department of Mechanical Engineering; The University of Hong Kong; Pokfulam Road Hong Kong SAR, China

4. Beijing National Laboratory for Condensed Matter Physics; Institute of Physics; Chinese Academy of Science; Beijing 100190 China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference60 articles.

1. Convergence of electronic bands for high performance bulk thermoelectrics

2. Convergence of Conduction Bands as a Means of Enhancing Thermoelectric Performance ofn-TypeMg2Si1−xSnxSolid Solutions

3. Stabilizing the Optimal Carrier Concentration for High Thermoelectric Efficiency

4. Beneficial Contribution of Alloy Disorder to Electron and Phonon Transport in Half-Heusler Thermoelectric Materials

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