Reconfigurable Si Nanowire Nonvolatile Transistors-Reference-Cited by-同舟云学术

Reconfigurable Si Nanowire Nonvolatile Transistors

Published:2017-12-11 Issue:1 Volume:4 Page:1700399
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Park So Jeong¹²³,Jeon Dae-Young¹²⁴,Piontek Sabrina⁵,Grube Matthias⁵,Ocker Johannes⁵,Sessi Violetta¹²,Heinzig André¹²,Trommer Jens⁵,Kim Gyu-Tae³,Mikolajick Thomas¹²,Weber Walter M.²⁵

Affiliation:

1. Chair of Nanoelectronic Materials; TU Dresden; Noethnitzer Strasse 64 01187 Dresden Germany

2. Center for Advancing Electronics Dresden (CfAED); 01062 Dresden Germany

3. School of Electrical Engineering; Korea University; Seoul 136-701 South Korea

4. Institute of Advanced Composite Materials; Korea Institute of Science and Technology; Joellabuk-do 55324 South Korea

5. Namlab gGmbH; Noethnitzer Strasse 64 01187 Dresden Germany

Funder

Deutsche Forschungsgemeinschaft

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Korea Semiconductor Research Consortium

Korea Institute of Science and Technology

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201700399/fullpdf

Reference30 articles.

1. Nanowire Crossbar Arrays as Address Decoders for Integrated Nanosystems

2. Exploiting Memristive BiFeO3Bilayer Structures for Compact Sequential Logics

3. Reconfigurable Silicon Nanowire Transistors

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Channel-bias-controlled reconfigurable silicon nanowire transistors via an asymmetric electrode contact strategy;Chip;2024-09

2. Nonvolatile Reconfigurable Logic Device Based on Photoinduced Interfacial Charge Trapping in van der Waals Gap;ACS Applied Materials & Interfaces;2024-04-18

3. Energy-Efficient Reconfigurable Transistor Achieving Sub-Nanojoule Consumption Per Programming Event;IEEE Electron Device Letters;2024-03

4. Depolarization Field Engineered Ferroelectric Mechanical Transistor With 0.3-Volts V _DD;IEEE Electron Device Letters;2023-12

5. Modulation Doping of Silicon Nanowires to Tune the Contact Properties of Nano‐Scale Schottky Barriers;Advanced Materials Interfaces;2023-10-15