Resistive Switching in ZnO Nanorods/Graphene Oxide Hybrid Multilayer Structures-Reference-Cited by-同舟云学术

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Resistive Switching in ZnO Nanorods/Graphene Oxide Hybrid Multilayer Structures

Published:2017-04-07 Issue:5 Volume:3 Page:1600418
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Anoop Gopinathan¹^ORCID,Panwar Varij¹²,Kim Tae Yeon¹,Jo Ji Young¹

Affiliation:

1. School of Materials Science and Engineering; Gwangju Institute of Science and Technology; Oryong-Dong Buk-Gu Gwangju 61005 South Korea

2. Department of Electronics and Communication Engineering; Graphic Era University; Clement Town Dehradun Uttarakhand 248002 India

Funder

National Research Foundation of Korea

GRI

Ministry of Science, ICT and Future Planning

Ministry of Education

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201600418/fullpdf

Reference34 articles.

1. Who Wins the Nonvolatile Memory Race?

2. Emerging memories: resistive switching mechanisms and current status

3. Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

4. Resistive Switching Memory Phenomena in PEDOT PSS: Coexistence of Switchable Diode Effect and Write Once Read Many Memory

5. Flexible Hybrid Organic–Inorganic Perovskite Memory

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1. Graphene derivant@chitosan composite-based biomemorizers: The effect of functional groups on the resistive switching performances and their thermal/irradiative stabilities;Diamond and Related Materials;2024-06

2. Self-Rectifying Gr/TMDC Heterostructures: Candidates for Resistive Switching Memory Devices;ACS Applied Electronic Materials;2024-02-07

3. Resistive Switching Properties in Copper Oxide–Graphene Oxide Nanocomposite-Based Devices for Flexible Electronic Applications;Journal of Electronic Materials;2023-11-08

4. Printed and flexible organic and inorganic memristor devices for non-volatile memory applications;Journal of Physics D: Applied Physics;2023-09-28

5. Binary metal oxide-based resistive switching memory devices: A status review;Materials Today Communications;2023-03

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