Electronic Bandgap and Exciton Binding Energy of Layered Semiconductor TiS3-Reference-Cited by-同舟云学术

Electronic Bandgap and Exciton Binding Energy of Layered Semiconductor TiS3

Published:2015-07-15 Issue:9 Volume:1 Page:1500126
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Molina-Mendoza Aday J.¹,Barawi Mariam²,Biele Robert³,Flores Eduardo²,Ares José R.²,Sánchez Carlos²⁴,Rubio-Bollinger Gabino¹⁴⁵,Agraït Nicolás¹⁴⁵⁶,D'Agosta Roberto³⁷,Ferrer Isabel J.²⁴,Castellanos-Gomez Andres⁶

Affiliation:

1. Dpto. de Física de la Materia Condensada; Universidad Autónoma de Madrid; Campus de Cantoblanco E-28049 Madrid Spain

2. Materials of Interest in Renewable Energies Group (MIRE Group); Dpto. de Física de Materiales; Universidad Autónoma de Madrid; Campus de Cantoblanco E-28049 Madrid Spain

3. ETSF Scientific Development Center; Dpto. de Física de Materiales; Universidad del País Vasco; E-20018 San Sebastián Spain

4. Instituto de Ciencia de Materiales “Nicolás Cabrera,”; Campus de Cantoblanco E-18049 Madrid Spain

5. Condensed Matter Physics Center (IFIMAC); Universidad Autónoma de Madrid; Campus de Cantoblanco E-28049 Madrid Spain

6. Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-nanociencia); Campus de Cantoblanco E-18049 Madrid Spain

7. IKERBASQUE; Basque Foundation for Science; E-48013 Bilbao Spain

Funder

Grupos Consolidados UPV/EHU del Gobierno Vasco

CONSOLIDER-INGENIO-2010: NANOTherm

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201500126/fullpdf

Reference61 articles.

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3. MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap

4. Single-Layer MoS2 Phototransistors

5. Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures

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