Solution-Processed Neodymium Oxide/ZnO Thin-Film Transistors with Electron Mobility in Excess of 65 cm V−1s−1-Reference-Cited by-同舟云学术

Solution-Processed Neodymium Oxide/ZnO Thin-Film Transistors with Electron Mobility in Excess of 65 cm V−1s−1

Author:

Esro Mazran¹,Kolosov Oleg²,Stolojan Vlad³,Jones Peter J.¹,Milne William I.⁴⁵,Adamopoulos George¹

Affiliation:

1. Engineering Department; Lancaster University; Lancaster LA1 4YR UK

2. Quantum Technology Centre; Department of Physics; University of Lancaster; Lancaster LA1 4YW UK

3. Advanced Technology Institute; Electronic and Electrical Engineering; University of Surrey; Guildford GU2 7HX UK

4. Department of Engineering; University of Cambridge; 9 JJ Thomson Avenue Cambridge CB3 0FA UK

5. Quantum Nanoelectronics Research Center (QNERC); Tokyo Institute of Technology; 2-12-1 Ookayama Meguro-ku Tokyo 152-8550 Japan

Funder

Ministry of Higher Education, Malaysia

Universiti Teknikal Malaysia Melaka

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

Reference74 articles.

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